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updated games on all devices. work well on android phone & tablet. play game with real time. game start in your android device. i play game with 10 friends at a time..1. Field of the Invention
The present invention relates to a method for fabricating a semiconductor device having a field effect transistor, more particularly to a method for fabricating a semiconductor device having a field effect transistor having a gate electrode including a silicide layer.
2. Description of the Background Art
The size of a transistor is rapidly decreasing with advances in fine-processing techniques. Corresponding to this, the size of a gate electrode of a field effect transistor (FET) must be decreased. In case of a general titanium silicide (TiSi2) gate electrode, however, the sheet resistance is increased due to a decrease of the size, whereby the operation speed of the transistor is decreased. To resolve this problem, the titanium silicide (TiSi2) gate electrode having a silicide layer has been proposed, where titanium, silicon and other elements are diffused into a gate electrode under a high temperature.
A conventional method of fabricating a semiconductor device having a silicide gate electrode will be described below with reference to FIGS. 1A to 1E.
As shown in FIG. 1A, a gate oxide film 2 and a gate electrode material film 3 including a polysilicon film 3a and a tungsten silicide (WSi) film 3b are formed in this order on a main surface of a semiconductor substrate 1. The gate electrode material film 3 is patterned by using a gate electrode mask (not shown). By an ion implantation, impurities are diffused into the gate electrode material film 3 and the semiconductor substrate 1 through the gate electrode mask.